Electronics and Optoelectronics
Optoelectronic Semiconductor Technology
Nanoelectronics
Technology/Patent
Summary
◆Based on ITRI’s 8-inch BEOL process line and memory chip design team, ITRI develop the key processes for advanced MRAM and realize the Kbits to Mbts MRAM chips.
◆The 3rd generation MRAM, The SOT MRAM array, show higher endurance and fast switch-performances.
◆Our foundry line can provide SOT MRAM technology service for the industry, academia and research community for the technology development, prototyping, preliminary trial production of new magnetic devices.
◆Embedded Non-Volatile Memory
◆IOT/AIOT system
◆AI Computing Engine
◆Computing in memory (CIM)
◆Writing time: ns-level
◆Thermal capability: ＞200 oC
Data category
Technology
Data ID
S11204I0046
Owner
Industrial Technology Research Institute(工業技術研究院)
Owner attribute
Research institution
Technology Maturity
Trial production
Sales Period (Start)
2023/04/10
Transaction method
Patent_exclusive license,Patent_non-exclusive license,Joint development,Negotiate by self,
Effective date of publication
2025/04/13