Wireless communication technology
Electronics and Optoelectronics
Optoelectronic Semiconductor Technology
Nanoelectronics
Technology/Patent
Summary
◆Gallium nitride (GaN, Eg=3.42 eV) wide bandgap semiconductor materials have an inherent advantage for high Vbd devices, Since the device breakdown is caused by the band-to-band impact ionization effect due to the accelerated carriers under a strong electric field.
◆Due to polarization discontinuity between AlGaN and GaN, two-dimensional electron gas (2DEG) forms at the AlGaN/GaN heterostructure, which also has a superior carrier mobility for high-speed devices.
◆GaN-based high electron mobility transistor (HEMT) is very suitable for high-power amplifiers for 5G base stations, military radars, rechargeable batteries, and power management system in automotive etc.
◆Our Core technology: epitaxy ＆ chip processes
◆For industry, ITRI provides an integration service from the upstream substrate ＆ epitaxy manufacturer to the downstream module ＆ design house in Taiwanese high-frequency and high-power industry.
◆ITRI aims to provide a one-stop service with strong customization flexibility and market connection, and eventually strengthen the autonomy and advancement of Taiwan’s Power HEMT and beyond 5G supply chain.
Data category
Technology
Data ID
S11204I0042
Owner
Industrial Technology Research Institute(工業技術研究院)
Owner attribute
Research institution
Technology Maturity
Trial production
Sales Period (Start)
2023/04/10
Transaction method
Patent_exclusive license,Patent_non-exclusive license,Joint development,Negotiate by self,
Effective date of publication
2025/04/13