Wireless communication technology
Electronics and Optoelectronics
Optoelectronic Semiconductor Technology
Nanoelectronics
Technology/Patent
Summary
GaN based HEMT has excellent high frequency characteristics and is conceived as the best candidate to fulfill the requirements of high power, high efficiency and operation in rugged environments of 5G beyond PA applications.
We provide the industry a cost effective, high performance GaN HEMT solution on 4" and 8" wafer for PA applications, in the meantime, through co-working with the players in the field to expedite the maturity of the technology.
- 4” GaN/Si (AlGaN-barrier) RF HEMT - Lift-off (Au-based) Process
- 8” GaN/Si (AlGaN-barrier) RF HEMT - CMOS-compatible (Au-free) Process
The ultimate goal is to link the industry based on the core technology to provide a sound foundation for 5G/6G industry and accelerate the realization of a B5G/6G connected world.
Data category
Technology
Data ID
S11204I0041
Owner
Industrial Technology Research Institute(工業技術研究院)
Owner attribute
Research institution
Technology Maturity
Trial production
Sales Period (Start)
2023/04/10
Transaction method
Patent_exclusive license,Patent_non-exclusive license,Joint development,Negotiate by self,
Effective date of publication
2025/04/13