Electronics and Optoelectronics
Optoelectronic Semiconductor Technology
Nanoelectronics
Technology/Patent
Summary
◆With the popularization of portable electronic products, low-power memory components have gradually received attention.
◆The write energy of ferroelectric memory (FRAM) is the most advantageous (＜2 mJoule), compared to RRAM, MRAM.
◆The combination of ferroelectric component (FE-MIM) and mainstream CMOS technology is ferroelectric random access memory FRAM
◆Low voltage planar ferroelectric memory technology (2D-FRAM)
◆High-density three-dimensional memory technology (3D-FRAM)
Data category
Technology
Data ID
S11204I0040
Owner
Industrial Technology Research Institute(工業技術研究院)
Owner attribute
Research institution
Technology Maturity
Trial production
Sales Period (Start)
2023/04/10
Transaction method
Patent_exclusive license,Patent_non-exclusive license,Joint development,Negotiate by self,
Effective date of publication
2025/04/13