Electronics and Optoelectronics
Optoelectronic Semiconductor Technology
Technology/Patent
Summary
◆Using the finite element method to establish a simulation model for ECD equipment and process.
◆Afford single and coupled simulation for the electric field, flow field, mass transfer and cathode substrate.
◆Fast approach of how to improve the thickness uniformity of ECD process about anode design, cathode aspect ratio, current density, cycle flow and paddle speed.
◆For RDL manufacturers, it can be applied to Wafer and Panel forms related ECD processes and provides the benefits of process optimization, productivity improvement and cost reduction.
◆For equipment vendors, it can be applied to the equipment development and design of ECD related elements and optimizes equipment architecture.
◆For material suppliers, it can be applied to correlate the solution recipes and plating results in electroless plating and electroplating.
Data category
Technology
Data ID
S11204I0030
Owner
Industrial Technology Research Institute(工業技術研究院)
Owner attribute
Research institution
Technology Maturity
Trial production
Sales Period (Start)
2023/04/10
Transaction method
Patent_exclusive license,Patent_non-exclusive license,Joint development,Negotiate by self,
Effective date of publication
2025/04/13